Latest Papers: Flexible MoS2 in Adv. Mat., Black P. and Bubble Pen of 2D materials both in NanoLetters.

-State of the art in CVD MoS2 flexible transistors operating at GHz frequencies is published in advanced materials. Congrats to Dr. Sherry Chang (now at Apple) and Maruthi Yogeesh for leading this research. The research is also covered by technical news media.
Nanotechweb.
Nanowerk.

-The first flexible black phosphorus RF transistors published in Nano Letters showing the highest cutoff frequencies of 20GHz at 0.5um channel length. An important progress towards flexible radio communication applications.

Congratulations to Weinan that led the research.

http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.5b04768

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-Furthermore, our recent collaborative research work with Prof. Yuebing Zheng group (Mechanical Engineering Department, UT Austin) on using Bubble Pen Lithography (BPL) for patterning 2D materials published in Nanoletters.

Congrats to Dr. Linhan Lin (Prof. Zheng group), Wei Li and Maruthi Yogeesh for leading this research.

This research article was highlighted by the online news media –
Science (Editors’ Choice)
IEEE Spectrum,
Statesman
UT News,
Photonics,
Sciencedaily,
Azonano,
Nanowerk,
Nanotechweb,
Phys.Org,
Optical Society of America,
EurekAlert
Kurzweilai
NewElectronics,
Controlled Environments,
Digital Journals,

Foreign News Media highlights our work

NDTV India
Business Standard
Financial Express
India Today

Discovery Channel highlights our work

haiyu

Grad|logic interview on grad school. EEweb features Akinwande as ‘Engineer of the Day’. ACS and New Scientist highlights vision.

-Dr. Chris Golde of Grad|Logic blog interviews Prof. Akinwande on navigating graduate school and some advice for graduate students. The main emphasis is on people and ideas.

Interview with Deji Akinwande

-EEweb, one of the popular electrical engineering websites has a Q&A feature article with Prof. Akinwande as the engineer of the day for 11/2/2015.

http://www.eeweb.com/spotlight/interview-with-dr.-deji-akinwande 

-ACS Central features him on their ‘Center Stage’ Q&A platform

http://pubs.acs.org/doi/full/10.1021/acscentsci.5b00348 

-New Scientist Magazine features our silicene work and highlights our perspective for Silicon 2.0 nanotechnology

https://www.newscientist.com/article/mg22830480-500-silicon-2-0-promises-superpowered-chips-and-solar-cells/

1st silicene device on cover of Nature Nanotechnology. Covered by Time magazine, NPR, Nature, ACS, IEEE, MIT, UTexas and over 50 news media

The first 2D silicon (silicene) transistor has been reported in nature nanotechnology. This work is enabled by very fruitful collaboration between Akinwande’s group and Molle’s Italian group, and led by research scientist Dr. Li Tao.

Silicene nature nanotechnology article

The Silicene device breakthrough was selected among the Top 100 Science stories by Discover.

Picture3

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News media coverage (selected news outlets out of over 50)

Nature news

Time magazine

National Public Radio (NPR)

ACS News

UT Press Release

UT-Austin Engineering

IEEE

MIT Tech Report

Royal Society of Chemistry

New Electronics

Nanotechweb

PhysicsOrg

GIGAOM

 

 

 

First flexible phosphorene transistors and radio demodulator in Nano Letters and highlighted in the news

The first flexible phosphorene transistors, circuits and radio demodulator was recently published in Nano Letters (March 2015) showing the highest mobilities among the 2D semiconductors and direct demodulation for wireless and radio communication applications.

Congratulations to Weinan and Maruthi that led the research.

http://pubs.acs.org/doi/abs/10.1021/nl5047329

The research article was highlighted by the online news media: nanotechweb, SPIE.

Nanotechweb

SPIE

NewMaterials

Wikipedia

Prof. Akinwande receives 2015 IEEE award and Avinash Nayak is awarded the 2015 Ben Streetman PhD Prize

Recent Awards in 2015:

-Prof Akinwande is awarded the 2015 IEEE Nanotechnology Early Career Award.

IEEE award

Prof. Akinwande receiving the IEEE Nanotechnology Early Career Award from IEEE President Dr. Howard E. Michel at the historic Palazzo Brancaccio in Rome, July 2015.

 

Recent PhD graduate Avinash Nayak is honored with the UT-Austin Ben Streetman Prize for “Outstanding Research by a Graduate Student in Electronic and Photonic Materials and Devices“. Congrats on graduation!

Avinash_Streetman

Avinash Nayak receives his award from Prof. Ben Streeman (center)

 

Congratulations!

Flexible 2D Nanoelectronics invited review article published at nature communications

Our invited review article on flexible 2D nanoelectronics (http://dx.doi.org/10.1038/ncomms6678 ) is now online at nature communications.

The review is timely and marks the 10 year anniversary of the pioneering works on graphene by Manchester and Georgia Tech groups.

The review article is a collaborative authorship with Jim Hone’s group at Columbia University.

Monolayer and Multilayer MoS2 pressure dependent bandgap and phase transition published in nanoletters and nature communications

The pressure dependent properties of monolayer MoS2 was recently published in nanoletters (Dec 2014) showing up to 12% direct gap modulation, the highest experimental bandgap modulation observed so far.

Congratulations to the UT, IISc, Rutgers, and Kaust teams that collaborated intimately on this research.

http://pubs.acs.org/doi/abs/10.1021/nl5036397

 

Previously, we reported the high-pressure/strain studies on bulk MoS2 resulting in the observation of semiconducting to metallic phase transition in nature communications. Congrats to Avinash and our collaborators.

http://www.nature.com/ncomms/2014/140507/ncomms4731/full/ncomms4731.html

Congratulations to new PhD graduates: Sherry Chang, Nassibe Rahimi and Sk. Fahad Chowdhury

Drs Sherry Chang, Nassibe Rahimi and Sk. Fahad  Chowdhury graduated with PhD degrees in electrical and computer engineering this Summer 2015.

Sherry’s thesis topic was

“Device Physics and Device Mechanics for Flexible MoS2 Thin Film Transistors”.

Nassibe’s thesis topic was

“Graphene and MoS2 Devices for Wafer-Scale Integrated Silicon Nanotechnology”.

Fahad’s thesis topic was

“Design, Fabrication and Characterization of Field-Effect Transistors Based on Two-Dimensional Materials and Their Circuit Applications”.

Congratulations and we wish you all the best in your personal and professional development.

300mm wafer-scale graphene demonstrated

Graphene synthesis has been demonstrated on industry standard 300mm silicon wafers showing more 95% monolayer uniformity. Notably statistical studies reveal that wafer-scale polycrystalline graphene offers similar or superior electrical results than single-crystal cost-expensive synthesized graphene.

The work was done in collaboration with Aixtron the leading graphene equipment manufacturer.

Publication in ACS nano

http://pubs.acs.org/doi/abs/10.1021/nn5038493

 

News coverage

http://nanotechweb.org/cws/article/tech/58674

http://thestack.com/graphene-research-manufacturing-breakthrough-university-of-texas-aixtron

 

Prof Akinwande chaired two recent 2014 international workshops/events on 2D materials

Prof. Akinwande Chairs two recent international workshops on 2D materials at MRS spring meeting and ARL.

The MRS 2014 spring meeting was focused on roll-to-roll graphene and co-organized and co-chaired by Prof. Rod Ruoff. International speakers from leading institutions and companies presented on the progress on this front. The event was sponsored by NSF, the Nascent ERC center, and Aixtron Inc.

The two-day event at ARL in August 2014 focused on the science and applications of 2D materials beyond graphene and featured researchers from the US, Europe, and South America. The event was sponsored by ARO, ARL and Nascent ERC center.

For more information about these past events, send an email inquiry.