Prof. Akinwande has been selected as an Inaugural Gordon Moore Inventor Fellow.
Our invited perspective article on 2D Xenes and 2D topological insulator materials has been published in nature materials.
-State of the art in CVD MoS2 flexible transistors operating at GHz frequencies is published in advanced materials. Congrats to Dr. Sherry Chang (now at Apple) and Maruthi Yogeesh for leading this research. The research is also covered by technical news media.
-The first flexible black phosphorus RF transistors published in Nano Letters showing the highest cutoff frequencies of 20GHz at 0.5um channel length. An important progress towards flexible radio communication applications.
Congratulations to Weinan that led the research.
-Furthermore, our recent collaborative research work with Prof. Yuebing Zheng group (Mechanical Engineering Department, UT Austin) on using Bubble Pen Lithography (BPL) for patterning 2D materials published in Nanoletters.
Congrats to Dr. Linhan Lin (Prof. Zheng group), Wei Li and Maruthi Yogeesh for leading this research.
This research article was highlighted by the online news media –
Science (Editors’ Choice)
Optical Society of America,
Foreign News Media highlights our work
Discovery Channel highlights our work
-Dr. Chris Golde of Grad|Logic blog interviews Prof. Akinwande on navigating graduate school and some advice for graduate students. The main emphasis is on people and ideas.
-EEweb, one of the popular electrical engineering websites has a Q&A feature article with Prof. Akinwande as the engineer of the day for 11/2/2015.
-ACS Central features him on their ‘Center Stage’ Q&A platform
-New Scientist Magazine features our silicene work and highlights our perspective for Silicon 2.0 nanotechnology
The first 2D silicon (silicene) transistor has been reported in nature nanotechnology. This work is enabled by very fruitful collaboration between Akinwande’s group and Molle’s Italian group, and led by research scientist Dr. Li Tao.
News media coverage (selected news outlets out of over 50)
Recent Awards in 2015:
-Prof Akinwande is awarded the 2015 IEEE Nanotechnology Early Career Award.
Prof. Akinwande receiving the IEEE Nanotechnology Early Career Award from IEEE President Dr. Howard E. Michel at the historic Palazzo Brancaccio in Rome, July 2015.
–Recent PhD graduate Avinash Nayak is honored with the UT-Austin Ben Streetman Prize for “Outstanding Research by a Graduate Student in Electronic and Photonic Materials and Devices“. Congrats on graduation!
Avinash Nayak receives his award from Prof. Ben Streeman (center)
Our invited review article on flexible 2D nanoelectronics (http://dx.doi.org/10.1038/ncomms6678 ) is now online at nature communications.
The review is timely and marks the 10 year anniversary of the pioneering works on graphene by Manchester and Georgia Tech groups.
The review article is a collaborative authorship with Jim Hone’s group at Columbia University.
The pressure dependent properties of monolayer MoS2 was recently published in nanoletters (Dec 2014) showing up to 12% direct gap modulation, the highest experimental bandgap modulation observed so far.
Congratulations to the UT, IISc, Rutgers, and Kaust teams that collaborated intimately on this research.
Previously, we reported the high-pressure/strain studies on bulk MoS2 resulting in the observation of semiconducting to metallic phase transition in nature communications. Congrats to Avinash and our collaborators.
Graphene synthesis has been demonstrated on industry standard 300mm silicon wafers showing more 95% monolayer uniformity. Notably statistical studies reveal that wafer-scale polycrystalline graphene offers similar or superior electrical results than single-crystal cost-expensive synthesized graphene.
The work was done in collaboration with Aixtron the leading graphene equipment manufacturer.
Publication in ACS nano