First flexible phosphorene transistors and radio demodulator in Nano Letters and highlighted in the news

The first flexible phosphorene transistors, circuits and radio demodulator was recently published in Nano Letters (March 2015) showing the highest mobilities among the 2D semiconductors and direct demodulation for wireless and radio communication applications.

Congratulations to Weinan and Maruthi that led the research.

The research article was highlighted by the online news media: nanotechweb, SPIE.





Monolayer and Multilayer MoS2 pressure dependent bandgap and phase transition published in nanoletters and nature communications

The pressure dependent properties of monolayer MoS2 was recently published in nanoletters (Dec 2014) showing up to 12% direct gap modulation, the highest experimental bandgap modulation observed so far.

Congratulations to the UT, IISc, Rutgers, and Kaust teams that collaborated intimately on this research.


Previously, we reported the high-pressure/strain studies on bulk MoS2 resulting in the observation of semiconducting to metallic phase transition in nature communications. Congrats to Avinash and our collaborators.

Congratulations to new PhD graduates: Sherry Chang, Nassibe Rahimi and Sk. Fahad Chowdhury

Drs Sherry Chang, Nassibe Rahimi and Sk. Fahad  Chowdhury graduated with PhD degrees in electrical and computer engineering this Summer 2015.

Sherry’s thesis topic was

“Device Physics and Device Mechanics for Flexible MoS2 Thin Film Transistors”.

Nassibe’s thesis topic was

“Graphene and MoS2 Devices for Wafer-Scale Integrated Silicon Nanotechnology”.

Fahad’s thesis topic was

“Design, Fabrication and Characterization of Field-Effect Transistors Based on Two-Dimensional Materials and Their Circuit Applications”.

Congratulations and we wish you all the best in your personal and professional development.

(ACS Nano) Flexible MoS2 transistor research highlighted on nanotechweb

“Researchers at the University of Texas at Austin and the University of Notre Dame, Indiana, both in the US, are the first to have succeeded in making high-performance molybdenite transistors on plastic substrates. The feat, hitherto deemed too difficult, means that the material might be ideal for making high-speed and low-power flexible electronics devices.”

SPIE Newsroom invited feature on Monolithic Graphene-Si VLSI Technology

SPIE Newsroom publishes Prof. Akinwande’s article, entitled “Integrating wafer-scalable graphene with ubiquitous silicon technology“. The article describes how the synthesis of nearly defect-free monolayer graphene can be combined with silicon technology in order to create innovative next-generation electronic and optical systems and sensor devices.

(Nanoletters) Improved graphene transfer and post-transfer restoration article featured on nanotechweb

Improved transfer tactics make better graphene devices


Polymer residues on graphene – routinely left behind after the material is transferred to dielectric substrates like SiO2 – adversely affect its electronic properties. Now, a team of researchers at the University of Texas at Austin has found that using lower concentrations of polymer solution during the transfer process is better, and results in less p-type doping in the carbon material. Treating the graphene surface with a chemical called formamide also temporarily enhances the electronic properties of graphene. The findings will help in making improved, high-performance carbon-based devices in the future.