Flexible 2D Nanoelectronics invited review article published at nature communications

Our invited review article on flexible 2D nanoelectronics (http://dx.doi.org/10.1038/ncomms6678 ) is now online at nature communications.

The review is timely and marks the 10 year anniversary of the pioneering works on graphene by Manchester and Georgia Tech groups.

The review article is a collaborative authorship with Jim Hone’s group at Columbia University.

Monolayer and Multilayer MoS2 pressure dependent bandgap and phase transition published in nanoletters and nature communications

The pressure dependent properties of monolayer MoS2 was recently published in nanoletters (Dec 2014) showing up to 12% direct gap modulation, the highest experimental bandgap modulation observed so far.

Congratulations to the UT, IISc, Rutgers, and Kaust teams that collaborated intimately on this research.



Previously, we reported the high-pressure/strain studies on bulk MoS2 resulting in the observation of semiconducting to metallic phase transition in nature communications. Congrats to Avinash and our collaborators.


Congratulations to new PhD graduates: Sherry Chang, Nassibe Rahimi and Sk. Fahad Chowdhury

Drs Sherry Chang, Nassibe Rahimi and Sk. Fahad  Chowdhury graduated with PhD degrees in electrical and computer engineering this Summer 2015.

Sherry’s thesis topic was

“Device Physics and Device Mechanics for Flexible MoS2 Thin Film Transistors”.

Nassibe’s thesis topic was

“Graphene and MoS2 Devices for Wafer-Scale Integrated Silicon Nanotechnology”.

Fahad’s thesis topic was

“Design, Fabrication and Characterization of Field-Effect Transistors Based on Two-Dimensional Materials and Their Circuit Applications”.

Congratulations and we wish you all the best in your personal and professional development.

300mm wafer-scale graphene demonstrated

Graphene synthesis has been demonstrated on industry standard 300mm silicon wafers showing more 95% monolayer uniformity. Notably statistical studies reveal that wafer-scale polycrystalline graphene offers similar or superior electrical results than single-crystal cost-expensive synthesized graphene.

The work was done in collaboration with Aixtron the leading graphene equipment manufacturer.

Publication in ACS nano



News coverage




Prof Akinwande chaired two recent 2014 international workshops/events on 2D materials

Prof. Akinwande Chairs two recent international workshops on 2D materials at MRS spring meeting and ARL.

The MRS 2014 spring meeting was focused on roll-to-roll graphene and co-organized and co-chaired by Prof. Rod Ruoff. International speakers from leading institutions and companies presented on the progress on this front. The event was sponsored by NSF, the Nascent ERC center, and Aixtron Inc.

The two-day event at ARL in August 2014 focused on the science and applications of 2D materials beyond graphene and featured researchers from the US, Europe, and South America. The event was sponsored by ARO, ARL and Nascent ERC center.

For more information about these past events, send an email inquiry.

(ACS Nano) Flexible MoS2 transistor research highlighted on nanotechweb

“Researchers at the University of Texas at Austin and the University of Notre Dame, Indiana, both in the US, are the first to have succeeded in making high-performance molybdenite transistors on plastic substrates. The feat, hitherto deemed too difficult, means that the material might be ideal for making high-speed and low-power flexible electronics devices.”


SPIE Newsroom invited feature on Monolithic Graphene-Si VLSI Technology

SPIE Newsroom publishes Prof. Akinwande’s article, entitled “Integrating wafer-scalable graphene with ubiquitous silicon technology“. The article describes how the synthesis of nearly defect-free monolayer graphene can be combined with silicon technology in order to create innovative next-generation electronic and optical systems and sensor devices.

(Nanoletters) Improved graphene transfer and post-transfer restoration article featured on nanotechweb

Improved transfer tactics make better graphene devices


Polymer residues on graphene – routinely left behind after the material is transferred to dielectric substrates like SiO2 – adversely affect its electronic properties. Now, a team of researchers at the University of Texas at Austin has found that using lower concentrations of polymer solution during the transfer process is better, and results in less p-type doping in the carbon material. Treating the graphene surface with a chemical called formamide also temporarily enhances the electronic properties of graphene. The findings will help in making improved, high-performance carbon-based devices in the future.