Our invited review article on flexible 2D nanoelectronics (http://dx.doi.org/10.1038/ncomms6678 ) is now online at nature communications.
The review is timely and marks the 10 year anniversary of the pioneering works on graphene by Manchester and Georgia Tech groups.
The review article is a collaborative authorship with Jim Hone’s group at Columbia University.
The pressure dependent properties of monolayer MoS2 was recently published in nanoletters (Dec 2014) showing up to 12% direct gap modulation, the highest experimental bandgap modulation observed so far.
Congratulations to the UT, IISc, Rutgers, and Kaust teams that collaborated intimately on this research.
Previously, we reported the high-pressure/strain studies on bulk MoS2 resulting in the observation of semiconducting to metallic phase transition in nature communications. Congrats to Avinash and our collaborators.
Drs Sherry Chang, Nassibe Rahimi and Sk. Fahad Chowdhury graduated with PhD degrees in electrical and computer engineering this Summer 2015.
Sherry’s thesis topic was
“Device Physics and Device Mechanics for Flexible MoS2 Thin Film Transistors”.
Nassibe’s thesis topic was
“Graphene and MoS2 Devices for Wafer-Scale Integrated Silicon Nanotechnology”.
Fahad’s thesis topic was
“Design, Fabrication and Characterization of Field-Effect Transistors Based on Two-Dimensional Materials and Their Circuit Applications”.
Congratulations and we wish you all the best in your personal and professional development.
Graphene synthesis has been demonstrated on industry standard 300mm silicon wafers showing more 95% monolayer uniformity. Notably statistical studies reveal that wafer-scale polycrystalline graphene offers similar or superior electrical results than single-crystal cost-expensive synthesized graphene.
The work was done in collaboration with Aixtron the leading graphene equipment manufacturer.
Publication in ACS nano
High performance graphene enabled water splitting device has been accepted for presentation at the upcoming 2014 IEEE IEDM conference in Dec, the premier device conference. Work is led by phd student Li Ji and a collaboration between several faculty including Prof. Ed Yu.
Prof. Akinwande Chairs two recent international workshops on 2D materials at MRS spring meeting and ARL.
The MRS 2014 spring meeting was focused on roll-to-roll graphene and co-organized and co-chaired by Prof. Rod Ruoff. International speakers from leading institutions and companies presented on the progress on this front. The event was sponsored by NSF, the Nascent ERC center, and Aixtron Inc.
The two-day event at ARL in August 2014 focused on the science and applications of 2D materials beyond graphene and featured researchers from the US, Europe, and South America. The event was sponsored by ARO, ARL and Nascent ERC center.
For more information about these past events, send an email inquiry.
Congratulations to Dr. Jongho Lee on his successful defense of Ph.D dissertation and graduation in May 2014. We wish you all the best in your future career at Samsung, Korea and beyond
A discrete realization of graphene based radio receiver system on flexible substrate has been demonstrated at the main Microwave conference, IEEE IMS 2014.
The paper has been selected as a finalist for best student paper award.
Congrats to Maruthi, Kristen, Jongho and Li Tao for this effort.
The two experimental papers report state of the art flexible graphene and MoS2 devices, and recovery of the intrinsic properties of 2D materials based on favorable fluoropolymer interactions.
“Researchers at the University of Texas at Austin and the University of Notre Dame, Indiana, both in the US, are the first to have succeeded in making high-performance molybdenite transistors on plastic substrates. The feat, hitherto deemed too difficult, means that the material might be ideal for making high-speed and low-power flexible electronics devices.”
SPIE Newsroom publishes Prof. Akinwande’s article, entitled “Integrating wafer-scalable graphene with ubiquitous silicon technology“. The article describes how the synthesis of nearly defect-free monolayer graphene can be combined with silicon technology in order to create innovative next-generation electronic and optical systems and sensor devices.
Improved transfer tactics make better graphene devices
Polymer residues on graphene – routinely left behind after the material is transferred to dielectric substrates like SiO2 – adversely affect its electronic properties. Now, a team of researchers at the University of Texas at Austin has found that using lower concentrations of polymer solution during the transfer process is better, and results in less p-type doping in the carbon material. Treating the graphene surface with a chemical called formamide also temporarily enhances the electronic properties of graphene. The findings will help in making improved, high-performance carbon-based devices in the future.