(ACS Nano) Flexible MoS2 transistor research highlighted on nanotechweb

“Researchers at the University of Texas at Austin and the University of Notre Dame, Indiana, both in the US, are the first to have succeeded in making high-performance molybdenite transistors on plastic substrates. The feat, hitherto deemed too difficult, means that the material might be ideal for making high-speed and low-power flexible electronics devices.”


SPIE Newsroom invited feature on Monolithic Graphene-Si VLSI Technology

SPIE Newsroom publishes Prof. Akinwande’s article, entitled “Integrating wafer-scalable graphene with ubiquitous silicon technology“. The article describes how the synthesis of nearly defect-free monolayer graphene can be combined with silicon technology in order to create innovative next-generation electronic and optical systems and sensor devices.

(Nanoletters) Improved graphene transfer and post-transfer restoration article featured on nanotechweb

Improved transfer tactics make better graphene devices


Polymer residues on graphene – routinely left behind after the material is transferred to dielectric substrates like SiO2 – adversely affect its electronic properties. Now, a team of researchers at the University of Texas at Austin has found that using lower concentrations of polymer solution during the transfer process is better, and results in less p-type doping in the carbon material. Treating the graphene surface with a chemical called formamide also temporarily enhances the electronic properties of graphene. The findings will help in making improved, high-performance carbon-based devices in the future.