The two experimental papers report state of the art flexible graphene and MoS2 devices, and recovery of the intrinsic properties of 2D materials based on favorable fluoropolymer interactions.
“Researchers at the University of Texas at Austin and the University of Notre Dame, Indiana, both in the US, are the first to have succeeded in making high-performance molybdenite transistors on plastic substrates. The feat, hitherto deemed too difficult, means that the material might be ideal for making high-speed and low-power flexible electronics devices.”
SPIE Newsroom publishes Prof. Akinwande’s article, entitled “Integrating wafer-scalable graphene with ubiquitous silicon technology“. The article describes how the synthesis of nearly defect-free monolayer graphene can be combined with silicon technology in order to create innovative next-generation electronic and optical systems and sensor devices.
Polymer residues on graphene – routinely left behind after the material is transferred to dielectric substrates like SiO2 – adversely affect its electronic properties. Now, a team of researchers at the University of Texas at Austin has found that using lower concentrations of polymer solution during the transfer process is better, and results in less p-type doping in the carbon material. Treating the graphene surface with a chemical called formamide also temporarily enhances the electronic properties of graphene. The findings will help in making improved, high-performance carbon-based devices in the future.
Invited 2013 spring/summer talks:
MRS Spring meeting, SPIE MIcro and Nanotechnology conference, ECS May meeting,
CMOSET symposium, INFOS conference,
TechConnect World technology conference
MS&E Dept. Stanford Lecture (May 31st)
Our research on state-of-the-art flexible graphene electronics was honored as a key technical news story of 2012. More information is available at nanotechweb.org.
Dr. Akinwande gives plenary talk on “Flexible Nanomaterials and Nanotechnology” at Nano MTY 2012