Improved transfer tactics make better graphene devices
Polymer residues on graphene – routinely left behind after the material is transferred to dielectric substrates like SiO2 – adversely affect its electronic properties. Now, a team of researchers at the University of Texas at Austin has found that using lower concentrations of polymer solution during the transfer process is better, and results in less p-type doping in the carbon material. Treating the graphene surface with a chemical called formamide also temporarily enhances the electronic properties of graphene. The findings will help in making improved, high-performance carbon-based devices in the future.
Invited 2013 spring/summer talks:
MRS Spring meeting, SPIE MIcro and Nanotechnology conference, ECS May meeting,
CMOSET symposium, INFOS conference,
TechConnect World technology conference
MS&E Dept. Stanford Lecture (May 31st)
Our research on state-of-the-art flexible graphene electronics was honored as a key technical news story of 2012. More information is available at nanotechweb.org.
Dr. Akinwande gives plenary talk on “Flexible Nanomaterials and Nanotechnology” at Nano MTY 2012
Ian Williamson and Michael Ramon earn Best in Session awards at TechCon 2012.
Dr. Akinwande wins the inaugural Geim and Novoselov Prize.
UT ECE professor Deji Akinwande has been
awarded the first Geim and Novoselov Graphene Prize during the gala dinner at the IEEE nano conference in Birmingham, UK. The award recognizes Deji’s work on ” flexible multifinger graphene device technology” and in particular his pioneering effort on graphene transistors for high speed high frequency flexible nano electronics. Graphene transistors on flexible substrates could enable future flexible smart systems. The prize is named in honor of the 2010 Nobel laureates for graphene discovery.
Dr. Deji Akinwande is an Assistant Professor in the Department of Electrical and Computer Engineering at The University of Texas at Austin. Professor Akinwande joined UT Austin starting from January 2010, and he is a member of IEEE, APS, ACS, and MRS societies.
(from ECE department news brief)
Our research on graphene CVD growth and device studies featured in the August 2012 issue of Physics World
Our research on high-quality graphene growth using copper film on oxidized Si is profiled at several sources. The quality of the wafer-scale CVD graphene is comparable to exfoliated natural flakes. Links at Aixtron, Graphene-Info, and electro-IQ.